Correlative analysis of embedded silicon interface passivation by Kelvin probe force microscopy and corona oxide characterization of semiconductor

We report a correlative analysis between corona oxide characterization of semiconductor (COCOS) and Kelvin probe force microscopy (KPFM) in study embedded silicon surfaces the field chemical field-effect passivation. The COCOS approach gives access to defect density, total charge contained passivation stack, potential barrier. Based on parameters, we could by KPFM analyze influence stack upon surface photovoltage. Thus, emerges as valuable method directly. confirm that it is possible differentiate local band bending (i.e., passivation) from effects due recombination rates passivation). measurements were carried five different layers thicknesses, precisely, 10.5 nm SiO2, 50 SiN, 7 Al2O3, HfO2, double layer Al2O3 below 53 Ta2O5. our analysis, identify HfO2 displays best properties. Additionally, using an anti-reflective coating such Ta2O5 top causes deteriorate. Finally, for p-type silicon, SiN appears be worst case terms